Marco Pala

About

Work

University of Udine

Italy

→

Università degli Studi di UDINE
|

Docenti di ruolo di IIa fascia

Italy

→

Centre National de la Recherche Scientifique

France

→

Centre National de la Recherche Scientifique

France

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Publications

Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: a Design Study based on First-Principle Transport Simulations

Summary

conference-paper

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement

Published by

Nature Electronics

Summary

journal-article

Scaled vertical-nanowire heterojunction tunnelling transistors with extreme quantum confinement

Summary

journal-article

Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition

Published by

Physical Review B

Summary

journal-article

Distinguishing different stackings in WSe2 bilayers grown using chemical vapor deposition

Summary

journal-article

Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride

Published by

Physical Review B

Summary

journal-article

Anisotropic flat band and charge density wave in quasi-one-dimensional indium telluride

Summary

journal-article

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence

Published by

Advanced Optical Materials

Summary

journal-article

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip‐Enhanced Photoluminescence

Summary

journal-article

Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Reinterpreting Low Resistance in Sb–MoS2 Ohmic Contacts by Means of Ab Initio Transport Simulations

Summary

journal-article

Direct observation of highly anisotropic electronic and optical nature in indium telluride

Published by

Physical Review Materials

Summary

journal-article

Direct observation of highly anisotropic electronic and optical nature in indium telluride

Summary

journal-article

Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off

Published by

ACS Applied Nano Materials

Summary

journal-article

Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off

Summary

journal-article

Thermal conductance of twisted-layer graphite nanofibers

Published by

Carbon

Summary

journal-article

Thermal conductance of twisted-layer graphite nanofibers

Summary

journal-article

Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination

Summary

conference-paper

Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition

Summary

journal-article

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer

Published by

Nanotechnology

Summary

journal-article

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Summary

journal-article

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

Published by

Journal of Computational Electronics

Summary

journal-article

Tunnel Field‐Effect Transistors Based on III–V Semiconductors

Summary

book-chapter

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure

Summary

journal-article

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Published by

Physical Review Research

Summary

journal-article

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Summary

journal-article

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric <i><b>α</b></i>-In<sub>2</sub>Se<sub>3</sub>

Published by

ACS Nano

Summary

journal-article

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3

Summary

journal-article

Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials

Summary

conference-paper

Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations

Summary

conference-paper

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Summary

journal-article

A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Published by

Journal of Physics D: Applied Physics

Summary

journal-article

Hybridization and localized flat band in the WSe2/MoSe2heterobilayer

Summary

journal-article

Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts

Summary

conference-paper

Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts

Summary

conference-paper

Full quantum simulation of Shockley–Read–Hall recombination in p-i-n and tunnel diodes

Published by

Solid-State Electronics

Summary

journal-article

Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes

Summary

journal-article

α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene

Published by

Physical Review B

Summary

journal-article

α − As 2 Te 3 as a platform for the exploration of the electronic band structure of single layer β − tellurene

Published by

Physical Review B

Summary

journal-article

α-As2Te3 as a platform for the exploration of the electronic band structure of single layer β-tellurene

Summary

journal-article

A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator

Published by

Solid-State Electronics

Summary

journal-article

A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator

Summary

journal-article

Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Published by

Solid-State Electronics

Summary

journal-article

Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation

Summary

journal-article

Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Published by

Solid-State Electronics

Summary

journal-article

Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Summary

journal-article

Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Published by

Nanoscale

Summary

journal-article

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

Summary

journal-article

Unidirectional Rashba spin splitting in single layer WS2(1-x)Se2xalloy

Summary

journal-article

A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Summary

journal-article

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Published by

IEEE Journal of the Electron Devices Society

Summary

journal-article

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Summary

journal-article

Phonon-assisted transport in van der Waals heterostructure tunnel devices

Published by

Solid-State Electronics

Summary

journal-article

Phonon-assisted transport in van der Waals heterostructure tunnel devices

Summary

journal-article

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Summary

journal-article

Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Summary

conference-paper

Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Summary

conference-paper

Single Photon Avalanche Diode with Monte Carlo Simulations: PDP, Jitter and Quench Probability

Summary

conference-paper

Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

Published by

npj 2D Materials and Applications

Summary

journal-article

Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors

Summary

journal-article

Monte Carlo study of Single Photon Avalanche Diodes: quenching statistics

Summary

conference-paper

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Published by

npj 2D Materials and Applications

Summary

journal-article

Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys

Summary

journal-article

Electronic band gap of van der Waals α-As2Te3 crystals

Published by

Applied Physics Letters

Summary

journal-article

Electronic band gap of van der Waals α-As 2 Te 3 crystals

Summary

journal-article

Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations

Summary

conference-paper

Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations

Summary

conference-paper

Quenching Statistics of Silicon Single Photon Avalanche Diodes

Published by

IEEE Journal of the Electron Devices Society

Summary

journal-article

Quenching Statistics of Silicon Single Photon Avalanche Diodes

Summary

journal-article

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Published by

Nanomaterials

Summary

journal-article

Strain and Spin-Orbit Coupling Engineering in Twisted WS<sub>2</sub>/Graphene Heterobilayer

Published by

Nanomaterials

Summary

journal-article

Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Published by

Physical Review Research

Summary

journal-article

Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Summary

journal-article

Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism

Summary

conference-paper

Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Summary

conference-paper

Full band monte carlo simulation of phonon transfer at interfaces

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Verilog-A model for avalanche dynamics and quenching in single-photon avalanche diodes

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Summary

conference-paper

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Published by

Physical Review B

Summary

journal-article

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Published by

Physical Review B

Summary

journal-article

Unit cell restricted Bloch functions basis for first-principle transport models: Theory and application

Summary

journal-article

Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Full-Band Quantum Transport of Heterojunction Electron Devices with Empirical Pseudopotentials

Summary

journal-article

Full Band Monte Carlo simulation of phonon transfer at interfaces

Summary

conference-paper

Full Band Monte Carlo simulation of phonon transfer at interfaces

Summary

conference-paper

Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism

Summary

conference-paper

Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Published by

IEEE Electron Device Letters

Summary

journal-article

A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect

Summary

journal-article

Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

Published by

Journal of Applied Physics

Summary

journal-article

Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

Published by

Journal of Applied Physics

Summary

journal-article

Quantum transport models based on NEGF and empirical pseudopotentials for accurate modeling of nanoscale electron devices

Summary

journal-article

Full band quantum transport modelling with EP and NEGF methods; Application to nanowire transistors

Summary

conference-paper

High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Published by

Nanotechnology

Summary

journal-article

High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Summary

journal-article

Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

conference-paper

Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices

Summary

conference-paper

Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

Summary

conference-paper

NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

conference-paper

Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits

Published by

2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Summary

conference-paper

New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits

Summary

conference-paper

On the origins of transport inefficiencies in mesoscopic networks

Published by

Scientific Reports

Summary

journal-article

On the origins of transport inefficiencies in mesoscopic networks

Summary

journal-article

Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings

Published by

NanoScience and Technology

Summary

book

Scanning-Probe Electronic Imaging of Lithographically Patterned Quantum Rings

Summary

book-chapter

Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Summary

journal-article

Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Impact of the Gate and Insulator Geometrical Model on the Static Performance and Variability of Ultrascaled Silicon Nanowire FETs

Summary

journal-article

Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures

Published by

Composants nanoélectroniques

Summary

journal-article

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

Published by

Physical Review B

Summary

journal-article

Full-band quantum simulation of electron devices with the pseudopotential method: Theory, implementation, and applications

Summary

journal-article

Vertical GaSb/AlSb/InAs Heterojunction Tunnel-FETs: A Full Quantum Study

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

High performance WTe<inf>2</inf>-MoS<inf>2</inf>in-plane heterojunction tunnel field effect transistors

Published by

European Solid-State Device Research Conference

Summary

conference-paper

High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors

Summary

conference-paper

Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

Published by

Journal of Physics D: Applied Physics

Summary

journal-article

Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

Summary

journal-article

Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Van der Waals tunnel field effect transistors with lateral momentum mismatch

Summary

conference-paper

Simulation of van der Waals vertical tunnel field-effect transistors

Summary

working-paper

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

Summary

conference-paper

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs

Summary

journal-article

Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

A review of selected topics in physics based modeling for tunnel field-effect transistors

Summary

journal-article

A review of selected topics in physics based modeling for tunnel field-effect transistors

Published by

Semiconductor Science and Technology

Summary

journal-article

NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations

Summary

conference-paper

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

Summary

conference-paper

Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs

Summary

conference-paper

Van der Waals tunnel field effect transistors with misoriented layers

Summary

conference-paper

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

Summary

conference-paper

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

Published by

Journal of Computational Electronics

Summary

journal-article

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

Published by

Journal of Computational Electronics

Summary

journal-article

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

Published by

Journal of Computational Electronics

Summary

journal-article

Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors

Summary

journal-article

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

Summary

conference-paper

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

Published by

European Solid-State Device Research Conference

Summary

conference-paper

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

Published by

Ieee Transactions on Electron Devices

Summary

journal-article

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Operation and Design of van der Waals Tunnel Transistors: A 3-D Quantum Transport Study

Summary

journal-article

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Published by

Solid-State Electronics

Summary

journal-article

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

Summary

journal-article

VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study

Published by

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

Summary

conference-paper

VDD scaling of ultra-Thin InAs MOSFETs: A full-quantum study

Summary

conference-paper

Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Published by

Journal of Applied Physics

Summary

journal-article

Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Summary

journal-article

Influence of interface traps on the performance of Tunnel FETs

Published by

2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

Summary

conference-paper

Influence of interface traps on the performance of Tunnel FETs

Summary

conference-paper

Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

Published by

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Summary

conference-paper

Modeling study of the mobility in FDSOI devices with a focus on near-spacer-region

Summary

conference-paper

Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

Published by

EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Summary

conference-paper

Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

Summary

conference-paper

Quantum simulation of tunnel field-effect transistors based on transition metal dichalcogenides

Summary

conference-paper

A computational study of van der Waals tunnel transistors: Fundamental aspects and design challenges

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

conference-paper

A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges

Summary

conference-paper

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

conference-paper

Quantum simulation of tunnel field-effect transistors based on a vertical heterojunction of 2D transition metal dichalcogenides

Summary

conference-paper

Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study

Published by

European Solid-State Device Research Conference

Summary

conference-paper

Electric performance of AlGaN/GaN heterojunction devices: A full-quantum study

Summary

conference-paper

Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

Published by

Ieee Transactions on Electron Devices

Summary

journal-article

Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Essential Physics of the OFF-State Current in Nanoscale MOSFETs and Tunnel FETs

Summary

journal-article

Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs

Published by

Ieee Journal of the Electron Devices Society

Summary

journal-article

Exploiting hetero-junctions to improve the performance of III-V nanowire tunnel-FETs

Published by

IEEE Journal of the Electron Devices Society

Summary

journal-article

Exploiting Hetero-Junctions to Improve the Performance of III-V Nanowire Tunnel-FETs

Summary

journal-article

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

Published by

Physical Review B

Summary

journal-article

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

journal-article

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy

Summary

journal-article

Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Full-quantum study of AlGaN/GaN HEMTs with InAlN back-barrier

Summary

conference-paper

Increase of self-heating effects in nanodevices induced by surface roughness: A full-quantum study

Published by

Journal of Applied Physics

Summary

journal-article

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Summary

conference-paper

Scanning probe electronic imaging of lithographically patterned quantum rings

Published by

NanoScience and Technology

Summary

book

Impact of Surface Roughness on Thermoelectric Properties of Silicon Nanotubes

Summary

conference-paper

Quantum simulation of self-heating effects in rough Si nanowire FETs

Published by

2014 International Workshop on Computational Electronics, IWCE 2014

Summary

conference-paper

Nanowire Devices

Summary

book-chapter

Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy

Summary

book-chapter

Towards Self-Powered Systems: Using Nanostructures to Harvest Ambient Energy

Summary

book-chapter

Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects

Published by

Sige, Ge, and Related Compounds 6: Materials, Processing, and Devices

Summary

book-chapter

Challenges and opportunities in the design of Tunnel FETs: Materials, device architectures, and defects

Published by

ECS Transactions

Summary

conference-paper

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

Summary

conference-paper

Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs

Summary

conference-paper

Modeling the Influence of Interface Traps on the Transfer Characteristics of In As Tunnel-FETs and MOSFETs

Published by

Dielectrics for Nanosystems 6: Materials Science, Processing, Reliability, and Manufacturing

Summary

book-chapter

Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading

Summary

journal-article

Large on-current enhancement in hetero-junction tunnel-FETs via molar fraction grading

Published by

IEEE Electron Device Letters

Summary

journal-article

Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading

Published by

Ieee Electron Device Letters

Summary

journal-article

Nanowire Devices

Published by

Beyond CMOS Nanodevices 2

Summary

book

Quantum simulation of a 2-D heterojunction interlayer tunneling field effect transistor

Summary

conference-paper

(Invited) Challenges and Opportunities in the Design of Tunnel FETs: Materials, Device Architectures, and Defects

Summary

conference-paper

Scanning Probe Electronic Imaging of Lithographically Patterned Quantum Rings

Summary

book-chapter

Quantum simulation of self-heating effects in rough Si nanowire FETs

Summary

conference-paper

(Invited) Modeling the Influence of Interface Traps on the Transfer Characteristics of InAs Tunnel-FETs and MOSFETs

Summary

conference-paper

Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects

Summary

journal-article

A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks

Summary

conference-paper

Coherent tunnelling across a quantum point contact in the quantum Hall regime

Summary

journal-article

Scanning gate spectroscopy of a quantum Hall island near a quantum point contact

Summary

conference-paper

Nanowires applications in the More Moore/More-Than-Moore perspectives

Summary

conference-paper

Towards self-powered systems: using nanostructures to harvest ambient energy

Summary

conference-paper

Beyond CMOS

Published by

Nanoscale CMOS: Innovative Materials, Modeling and Characterization

Summary

book

Beyond CMOS

Summary

book-chapter

Coherence and Coulomb blockade in ultra-small quantum Hall islands

Summary

conference-paper

Coherent tunnelling across a quantum point contact in the quantum Hall regime

Published by

Scientific Reports

Summary

journal-article

Coherent tunnelling across a quantum point contact in the quantum Hall regime

Published by

Scientific Reports

Summary

journal-article

Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

conference-paper

Design options for hetero-junction tunnel FETs with high on current and steep sub-threshold voltage slope

Summary

conference-paper

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs-Part II: Comparative Analysis and Trap-Induced Variability

Published by

Ieee Transactions on Electron Devices

Summary

journal-article

Interface traps in InAs nanowire tunnel FETs and MOSFETs - Part II: Comparative analysis and trap-induced variability

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs - Part II: Comparative Analysis and Trap-Induced Variability

Summary

journal-article

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs-Part I: Model Description and Single Trap Analysis in Tunnel-FETs

Published by

Ieee Transactions on Electron Devices

Summary

journal-article

Interface traps in inas nanowire tunnel-FETs and MOSFETs - Part I: Model description and single trap analysis in tunnel-FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs - Part I: Model Description and Single Trap Analysis in Tunnel-FETs

Summary

journal-article

Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Published by

Solid-State Electronics

Summary

journal-article

Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Published by

Solid-State Electronics

Summary

journal-article

Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Published by

Solid-State Electronics

Summary

journal-article

Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

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Locating an individual quantum Hall island inside a quantum ring

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Physics of Semiconductors

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Locating an individual quantum hall island inside a quantum ring

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Locating an individual quantum hall island inside a quantum ring

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Nanoscale CMOS: Innovative Materials, Modeling and Characterization

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book

NEGF for 3D Device Simulation of Nanometric Inhomogenities

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Planning The Electron Traffic In Semiconductor Networks: A Mesoscopic Analog Of The Braess Paradox Encountered In Road Networks

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Physics of Semiconductors

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Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

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Scanning gate spectroscopy of transport across a quantum Hall nano-island

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New Journal of Physics

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Scanning gate spectroscopy of transport across a quantum Hall nano-island

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New Journal of Physics

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Scanning gate spectroscopy of transport across a quantum Hall nano-island

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Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox

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Physical Review Letters

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Transport Inefficiency in Branched-Out Mesoscopic Networks: An Analog of the Braess Paradox

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Transport inefficiency in branched-out mesoscopic networks: An analog of the braess paradox

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Physical Review Letters

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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Published by

IEEE Transactions on Electron Devices

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A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

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Nanoscale Research Letters

Summary

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A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks

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Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs

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Ieee Transactions on Electron Devices

Summary

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Deterministic method to evaluate the threshold voltage variability induced by discrete trap charges in Si-nanowire FETs

Published by

IEEE Transactions on Electron Devices

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Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs

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Surface-roughness-induced variability in nanowire InAs tunnel FETs

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IEEE Electron Device Letters

Summary

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Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: a full quantum study

Published by

2012 Ieee International Electron Devices Meeting (Iedm)

Summary

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Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

Published by

Technical Digest - International Electron Devices Meeting, IEDM

Summary

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Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study

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Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Published by

2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012

Summary

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Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs

Summary

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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Published by

Ieee Transactions on Electron Devices

Summary

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Strain-induced performance improvements in InAs nanowire tunnel FETs

Published by

IEEE Transactions on Electron Devices

Summary

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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Summary

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Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

Published by

Ieee Electron Device Letters

Summary

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Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs

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Theoretical study of thermoelectric properties of SiC nanowires

Published by

Materials Science Forum

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book

Theoretical Study of Thermoelectric Properties of SiC Nanowires

Summary

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Imaging quantum Hall Coulomb islands inside a quantum ring

Summary

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A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs

Published by

2011 Ieee International Electron Devices Meeting (Iedm)

Summary

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A simulation study of strain induced performance enhancements in InAs nanowire tunnel-FETs

Published by

Technical Digest - International Electron Devices Meeting, IEDM

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A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs

Summary

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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

Published by

Semiconductor Science and Technology

Summary

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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: Successes and limitations

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Semiconductor Science and Technology

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On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

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Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

Summary

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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview

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Acta Physica Polonica a

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Scanning-gate microscopy of semiconductor nanostructures: An overview

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Acta Physica Polonica A

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Superconducting proximity effect in interacting quantum dots revealed by shot noise

Published by

Solid State Communications

Summary

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Superconducting proximity effect in interacting quantum dots revealed by shot noise

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Solid State Communications

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Superconducting proximity effect in interacting quantum dots revealed by shot noise

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[Invited] Scanning-gate microscopy of semiconductor nanostructures : an overview

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Acta Physica Polonica A

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A Study for Thermoelectric Properties of SiC nanowires

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Scanning-Gate Microscopy of Semiconductor Nanostructures: An Overview

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Acta Physica Polonica A

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Quantum Simulation of Silicon-Nanowire FETs

Summary

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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Published by

Ieee Transactions on Electron Devices

Summary

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A comparative study of surface-roughness-induced variability in silicon nanowire and double-gate FETs

Published by

IEEE Transactions on Electron Devices

Summary

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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

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A Study for Thermoelectric Properties of Si nanowires

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Superconducting proximity effect in interacting double-dot systems

Summary

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Superconducting proximity effect in interacting double-dot systems

Published by

Physical Review B: Condensed Matter and Materials Physics

Summary

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Imaging Coulomb islands in a quantum Hall interferometer

Published by

Nature Communications

Summary

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Imaging Coulomb islands in a quantum Hall interferometer

Published by

Nature Communications

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Imaging Coulomb islands in a quantum Hall interferometer

Summary

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Spin-orbit coupling and phase coherence in InAs nanowires

Published by

Physical Review B

Summary

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Superconducting proximity effect in interacting double-dot systems

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

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Spin-orbit coupling and phase coherence in InAs nanowires

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Physical Review B - Condensed Matter and Materials Physics

Summary

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Spin-orbit coupling and phase coherence in InAs nanowires

Summary

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Spin-orbit coupling and phase-coherence in InAs nanowires

Published by

Physical Review B: Condensed Matter and Materials Physics

Summary

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Superconducting proximity effect in interacting double-dot systems

Published by

Physical Review B

Summary

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Elastic and inelastic scattering in SiNWs

Summary

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Non-equilibrium transport through coupled quantum dot-metallic island systems

Summary

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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs

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Ieee Transactions on Electron Devices

Summary

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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs

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IEEE Transactions on Electron Devices

Summary

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Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

Summary

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Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

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IEEE Transactions on Electron Devices

Summary

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Nonlocal Andreev transport through an interacting quantum dot

Published by

Physical Review B: Condensed Matter and Materials Physics

Summary

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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

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Microelectronics Journal

Summary

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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

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Microelectronics Journal

Summary

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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

Summary

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3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity

Published by

Microelectronics Journal

Summary

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Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs

Published by

2009 9th Ieee Conference on Nanotechnology (Ieee-Nano)

Summary

journal-article

Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs

Published by

2009 9th IEEE Conference on Nanotechnology, IEEE NANO 2009

Summary

conference-paper

Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs

Summary

conference-paper

Challenges and prospects of RF oscillators using silicon Resonant Tunneling Diodes

Published by

ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Summary

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Challenges and prospects of RF oscillators using silicon resonant tunneling diodes

Published by

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Summary

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Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

Published by

Ieee Electron Device Letters

Summary

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Channel-length dependence of low-field mobility in silicon-nanowire FETs

Published by

IEEE Electron Device Letters

Summary

journal-article

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

Summary

journal-article

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

Published by

IEEE Electron Device Letters

Summary

journal-article

Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

Published by

Ieee Transactions on Electron Devices

Summary

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Full quantum treatment of remote Coulomb scattering in silicon nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

journal-article

Full Quantum Treatment of Remote Coulomb Scattering in Silicon Nanowire FETs

Summary

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Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs

Published by

2009 International Conference on Simulation of Semiconductor Processes and Devices

Summary

journal-article

Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs

Published by

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Summary

conference-paper

Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs

Summary

conference-paper

Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs

Published by

Journal of Computational Electronics

Summary

journal-article

Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs

Published by

Journal of Computational Electronics

Summary

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Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs

Summary

journal-article

Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs

Published by

Iwce-13: 2009 13th International Workshop on Computational Electronics

Summary

journal-article

Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs

Published by

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Summary

conference-paper

Full-3D real-space simulation of surface-roughness effects in double-gate MOSFETs

Summary

conference-paper

Full-3D real-space treatment of surface roughness in double gate MOSFETs

Published by

Ulis 2009: 10th International Conference on Ultimate Integration of Silicon

Summary

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Full-3D real-space treatment of surface roughness in double gate MOSFETs

Published by

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

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Full-3D real-space treatment of surface roughness in double gate MOSFETs

Summary

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Influence of Ionized Impurities in Silicon Nanowire MOS Transistors

Published by

Iwce-13: 2009 13th International Workshop on Computational Electronics

Summary

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Influence of ionized impurities in Silicon Nanowire Transistors

Summary

conference-paper

Influence of ionized impurities in silicon nanowire MOS transistors

Published by

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Summary

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Intrinsic cut off frequency of Si and GaAs based resonant tunneling diodes

Published by

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

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Nonlocal Andreev transport through an interacting quantum dot

Published by

Physical Review B

Summary

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Nonlocal Andreev transport through an interacting quantum dot

Published by

Physical Review B - Condensed Matter and Materials Physics

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Nonlocal Andreev transport through an interacting quantum dot

Summary

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Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

Published by

physica status solidi (c)

Summary

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Performances comparison of Si and GaAs based resonant tunneling diodes

Published by

Physica Status Solidi (C) Current Topics in Solid State Physics

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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Published by

Nanotechnology

Summary

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Phonon-and surface-roughness-limited mobility of gate-all-around 3C-SiC and Sinanowire FETs

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Nanotechnology

Summary

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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

Summary

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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

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Nanotechnology

Summary

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Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects

Published by

Nanotechnology

Summary

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Scanning gate microscopy of quantum rings: Effects of an external magnetic field and of charged defects

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Nanotechnology

Summary

journal-article

Scanning gate microscopy of quantum rings: effects of an external magnetic field and of charged defects

Summary

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Three-dimensional real-space simulation of surface roughness in silicon nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

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Three-Dimensional Real-Space Simulation of Surface Roughness in Silicon Nanowire FETs

Summary

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Full-3D real-space simulation of surface-roughness effects in double gate MOSFETs

Summary

conference-paper

Etude du transport dans les composants ultracourts sur SOI

Summary

conference-paper

Full-3D real-space treatment of surface roughness in double gate MOSFETs

Summary

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Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

Summary

conference-paper

Simulation full-3D real-space NEGF du transport et du magnétotransport dans le FET à nanofil de Silicium

Summary

conference-paper

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

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Size dependence of surface-roughness-limited mobility in Silicon nanowire FETs

Published by

IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Summary

conference-paper

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

Summary

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Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs

Published by

IEEE Transactions on Electron Devices

Summary

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Size dependence of surface-roughness-limited mobility in Silicon Nanowire FETs

Summary

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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

Summary

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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

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Journal of Computational Electronics

Summary

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Imaging the electron local density of states inside buried semiconductor quantum rings

Summary

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Local Density of States from Scanning Gate Microscopy

Summary

conference-paper

Local density of states in mesoscopic samples from scanning gate microscopy

Published by

Physical Review B

Summary

journal-article

Local density of states in mesoscopic samples from scanning gate microscopy

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

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Local density of states in mesoscopic samples from scanning gate microscopy

Summary

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Nonequilibrium Josephson and Andreev current through interacting quantum dots (vol 9, 278, 2007)

Published by

New Journal of Physics

Summary

journal-article

Erratum: Nonequilibrium Josephson and Andreev current through interacting quantum dots (New Journal of Physics 9 (278))

Published by

New Journal of Physics

Summary

journal-article

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

Summary

conference-paper

Full 3D real-space NEGF simulation of transport and magnetotransport in Si-Nanowire FETs

Summary

conference-paper

Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

Published by

Journal of Computational Electronics

Summary

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Full-three dimensional quantum approach to evaluate the surface-roughness-limited magnetoresistance mobility in SNWT

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Journal of Computational Electronics

Summary

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Quantum transport in nanowire metal-oxide-semiconductor transistors: influence of dielectric confinement

Summary

conference-paper

Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

Published by

Physical Review B

Summary

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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

journal-article

Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

Summary

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Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads

Published by

Physical Review B: Condensed Matter and Materials Physics

Summary

journal-article

Real-time diagrammatic approach to transport through interacting quantum dots with normal and superconducting leads (vol 77, art no 134513, 2008)

Published by

Physical Review B

Summary

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Scanning-Gate Microscopy images the electronic LDOS inside nanostructures

Summary

conference-paper

Nonequilibrium Josephson and Andreev current through interacting quantum dots

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New Journal of Physics

Summary

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Photodarkening and photobleaching of an ytterbium-doped silica double-clad LMA fiber

Published by

Optics Express

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Imaging electron wave functions inside open quantum rings

Summary

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Non-Equilibrium Josephson and Andreev Current through Interacting Quantum Dots

Published by

New Journal of Physics

Summary

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Nonequilibrium Josephson and Andreev current through interacting quantum dots

Summary

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Imaging electron wave functions inside open quantum rings

Published by

Physical Review Letters

Summary

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Suppression of weak antilocalization in GaxIn1-xAs/InP narrow quantum wires

Summary

journal-article

Suppression of weak antilocalization in Gax In1-x AsInP narrow quantum wires

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

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Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs

Summary

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Three-dimensional simulation of realistic single electron transistors

Summary

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Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities

Summary

journal-article

Three-dimensional simulation of realistic single electron transistors

Published by

IEEE Transactions on Nanotechnology

Summary

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Rashba spin precession in quantum-Hall edge channels

Summary

journal-article

Rashba spin precession in quantum-Hall edge channels

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

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Numerical simulation of ballistic magnetoconductance and magnetic focusing in strained Si-SiGe cavities

Published by

Nanotechnology

Summary

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Universal Rashba spin precession of two-dimensional electrons and holes

Published by

Europhysics Letters

Summary

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Two-dimensional hole precession in an all-semiconductor spin field effect transistor (art. no. 045304)

Summary

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Universal Rashba spin precession of two-dimensional electrons and holes

Summary

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Ballistic transport in strained-Si cavities: Experiment and theory

Published by

2004 4th IEEE Conference on Nanotechnology

Summary

conference-paper

Effect of dephasing on the current statistics of mesoscopic devices

Published by

Physical Review Letters

Summary

journal-article

Effect of dephasing on the current statistics of mesoscopic devices

Summary

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Modeling the effects of dephasing on mesoscopic noise

Published by

Proceedings of SPIE - The International Society for Optical Engineering

Summary

conference-paper

Modeling the effects of dephasing on mesoscopic noise

Summary

conference-paper

Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

journal-article

Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism (art. no. 235304)

Summary

journal-article

Three-dimensional simulation of single electron transistors

Published by

2004 4th IEEE Conference on Nanotechnology

Summary

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Three-dimensional simulation of single electron transistors

Summary

conference-paper

Two-dimensional hole precession in an all-semiconductor spin field effect transistor

Published by

Physical Review B - Condensed Matter and Materials Physics

Summary

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Decoherence, wave function collapses and non-ordinary statistical mechanics

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Decoherence, wave function collapses and non-ordinary statistical mechanics

Published by

Chaos, Solitons and Fractals

Summary

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Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices

Summary

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Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices

Published by

Journal of Computational Electronics

Summary

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A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures

Summary

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Extraction of parameters of surface states from experimental test structures

Summary

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Extraction of parameters of surface states from experimental test structures

Published by

Nanotechnology

Summary

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A three-dimensional solver of the Schrödinger equation in momentum space for the detailed simulation of nanostructures

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Nanotechnology

Summary

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Towards nanotechnology computer aided design: The NANOTCAD project

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Proceedings of the IEEE Conference on Nanotechnology

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Quantum measurement and entropy production

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Quantum measurement and entropy production

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Physics Letters, Section A: General, Atomic and Solid State Physics

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Towards the thermodynamics of localization processes

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Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics

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Towards the thermodynamics of localization processes

Summary

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